DocumentCode
3555914
Title
A gate-controlled MISIM switch
Author
Shieh, C.L. ; Wagner, S. ; Jackel, L.D. ; Howard, R.E.
Author_Institution
Princeton University, New Jersey
Volume
28
fYear
1982
fDate
1982
Firstpage
658
Lastpage
661
Abstract
We report the first gate-controlled MISIM switch, Its switching voltage can be controlled from 7.2 V to 2.5 V by a gate bias ranging from -5 V to +5 V. The gate-controlled MISIM switch has the capability to address individual devices. This capability is not shared by a substrate current controlled MISIM switch reported earlier. We also fabricated the first substrate current controlled MISIM switch on p-type silicon. This switch has a lower holding current (10 
A) and a lower switching voltage (7.3 V) than the substrate current controlled MISIM switch on n-type silicon. The control of the switching voltage by the substrate current ( 
A) also is more effective.
A) and a lower switching voltage (7.3 V) than the substrate current controlled MISIM switch on n-type silicon. The control of the switching voltage by the substrate current ( A) also is more effective.Keywords
Cities and towns; Computer science; Ear; Epitaxial growth; Metal-insulator structures; Schottky barriers; Silicon; Substrates; Switches; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1982 International
Type
conf
DOI
10.1109/IEDM.1982.190379
Filename
1482913
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