Title :
A half micron MOSFET using double implanted LDD
Author :
Ogura, Seiki ; Codella, Christopher F. ; Rovedo, Nivo ; Shepard, Joseph F. ; Riseman, Jacob
Author_Institution :
IBM, Hopewell Junction, NY
Abstract :
Double-implanted LDD, which consists of self-aligned p pockets below the n regions in LDD, is introduced to improve both breakdown and short channel effects. Its fabrication and experimental results are presented. The device optimized for a 0.5µm channel and 3.5V supply is discussed.
Keywords :
Boron; DRAM chips; Design optimization; Electric breakdown; Fabrication; Implants; Jacobian matrices; MOSFET circuits; Power supplies; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 1982 International
DOI :
10.1109/IEDM.1982.190395
