DocumentCode :
3555935
Title :
Cell model for E2PROM floating-gate memories
Author :
Suciu, Paul I. ; Cox, Bill P. ; Rinerson, Darrell D. ; Cagnina, Sal F.
Author_Institution :
Advanced Micro Devices, Sunnyvale, CA, USA
Volume :
28
fYear :
1982
fDate :
1982
Firstpage :
737
Lastpage :
740
Abstract :
A model that describes the cell behavior for E2PROM memories was developed and shows good agreement with experimental evidence. The model uses as inputs the Fowler-Nordheim tunneling equation, the cell characteristics and the shape of the programming pulse, to describe the electric fields and the threshold voltages of the cell. Special attention is dedicated to properly measuring the tunneling currents.
Keywords :
Capacitance; Dielectrics; Electrons; Equations; Nonvolatile memory; PROM; Pulse shaping methods; Shape; Threshold voltage; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1982 International
Type :
conf
DOI :
10.1109/IEDM.1982.190400
Filename :
1482934
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3555935
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