• DocumentCode
    3555946
  • Title

    Measurement of electron drift velocity in compositionally graded AlxGa1-xAs by time resolved optical picosecond reflectivity

  • Author

    Levine, B.F. ; Tsang, W.T. ; Bethea, C.G. ; Capasso, F.

  • Author_Institution
    Bell Laboratories, Murray Hill, NJ, USA
  • Volume
    28
  • fYear
    1982
  • fDate
    1982
  • Firstpage
    778
  • Lastpage
    780
  • Abstract
    The velocity of minority carrier electrons in a heavily doped (p = 2\\times10^{18} cm-3) MBE grown compositionally graded (0.12 eV/µm) AlxGa1-xAs layer has been measured for the first time. The drift velocity is determined to be Ve= 2.3\\times10^{6} cm/sec in a quasi-electric field of 1.2 kV/cm.
  • Keywords
    Delay effects; Electron mobility; Geometrical optics; Laser excitation; Optical filters; Optical scattering; Photonic crystals; Probes; Space vector pulse width modulation; Velocity measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1982 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1982.190411
  • Filename
    1482945
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3555946