DocumentCode
3555948
Title
Enhancement of the electron velocity in GaAlAs-GaAs heterojunction bipolar transistor with abrupt emitter-base interface
Author
Ankri, D. ; Schaff, W. ; Smith, P. ; Wood, C.E.C. ; Eastman, L.F.
Author_Institution
Cornell University, Ithaca, NY
Volume
28
fYear
1982
fDate
1982
Firstpage
788
Lastpage
788
Keywords
Bipolar transistors; Capacitance; Current measurement; Electrical resistance measurement; Electron emission; Gain measurement; Gallium arsenide; Heterojunction bipolar transistors; Molecular beam epitaxial growth; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1982 International
Type
conf
DOI
10.1109/IEDM.1982.190413
Filename
1482947
Link To Document