Title :
CMOS-Devices isolated by ion-implanted buried silicon nitride
Author :
Zimmer, G. ; Neubert, E. ; Zetzmann, W. ; Liu, Z.L.
Author_Institution :
University of Dortmund, Dortmund, W.Germany
Keywords :
Annealing; Circuit testing; Epitaxial growth; Epitaxial layers; Implants; Inverters; Leakage current; MOSFETs; Nitrogen; Silicon compounds;
Conference_Titel :
Electron Devices Meeting, 1982 International
DOI :
10.1109/IEDM.1982.190414
