DocumentCode

3555954

Title

Selectively-doped Al0.48In0.52As/Ga0.47In0.52As heterostructure transistors

Author

Pearsall, T.P. ; Hendel, R. ; O´Connor, P. ; Alavi, K. ; Cho, A.Y.

Author_Institution

Bell Laboratories, Murray Hill, NJ

Volume

28

fYear

1982

fDate

1982

Firstpage

801

Lastpage

802

Keywords

Carrier confinement; Electron mobility; FET integrated circuits; Fabrication; Integrated circuit technology; Temperature; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1982 International

Type

conf

DOI

10.1109/IEDM.1982.190419

Filename

1482953