Title :
A new dynamic RAM cell in recrystallized polysilicon
Author :
Jolly, Richard D. ; Kamins, Theodore I.
Author_Institution :
SEEQ Technology, San Jose, CA
Keywords :
Alpha particles; Capacitance; Crystallization; Current measurement; DRAM chips; Laboratories; Leakage current; Temperature distribution; Time measurement; Voltage;
Conference_Titel :
Electron Devices Meeting, 1982 International
DOI :
10.1109/IEDM.1982.190420
