DocumentCode
3555957
Title
Hot electron improvement in MOS RAM´s based on epitaxial substrate
Author
Satoh, S. ; Nagatomo, M. ; Satoh, Y. ; Matsumoto, H. ; Abe, H.
Author_Institution
Mitsubishi Electric Corp., Itami, Hyogo, Japan
Volume
28
fYear
1982
fDate
1982
Firstpage
809
Lastpage
809
Keywords
Conductivity; Epitaxial layers; Hot carrier injection; Laboratories; Large scale integration; Research and development; Secondary generated hot electron injection; Stress measurement; Substrate hot electron injection; Time measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1982 International
Type
conf
DOI
10.1109/IEDM.1982.190422
Filename
1482956
Link To Document