Title :
Hot electron improvement in MOS RAM´s based on epitaxial substrate
Author :
Satoh, S. ; Nagatomo, M. ; Satoh, Y. ; Matsumoto, H. ; Abe, H.
Author_Institution :
Mitsubishi Electric Corp., Itami, Hyogo, Japan
Keywords :
Conductivity; Epitaxial layers; Hot carrier injection; Laboratories; Large scale integration; Research and development; Secondary generated hot electron injection; Stress measurement; Substrate hot electron injection; Time measurement;
Conference_Titel :
Electron Devices Meeting, 1982 International
DOI :
10.1109/IEDM.1982.190422
