Title :
Properties of thin oxynitride films used as floating-gate tunneling dielectrics
Author :
Jenq, Ching S. ; Chiu, Te-Long ; Joshi, Bharati ; Hu, Jim
Author_Institution :
SEEQ Technology, San Jose, California
Keywords :
Annealing; Character generation; Dielectric devices; Dielectric thin films; Electron traps; Indium tin oxide; Read only memory; Temperature; Tunneling;
Conference_Titel :
Electron Devices Meeting, 1982 International
DOI :
10.1109/IEDM.1982.190424
