DocumentCode
3555984
Title
Modeling static and dynamic behavior of power devices
Author
Selberherr, S.
Author_Institution
Technische Universität Wein, Wein, Austria
Volume
29
fYear
1983
fDate
1983
Firstpage
71
Lastpage
74
Abstract
Comments on models of physical parameters involved in numerical power device simulation are given. Problems associated with carrier-carrier scattering, recombination and heavy doping are stressed. A transient quasi-three-dimensional simulation of a thyristor illustrates the state of the art in numerical power device modeling.
Keywords
Analytical models; Doping; Electron mobility; Numerical analysis; Numerical models; Numerical simulation; Radiative recombination; Scattering; Semiconductor process modeling; Thyristors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1983 International
Type
conf
DOI
10.1109/IEDM.1983.190443
Filename
1483568
Link To Document