Title :
A unified bipolar device model
Author :
Kull, G.M. ; Nagel, L.W. ; Lee, S.W. ; Lloyd, P. ; Prendergast, E.J. ; Dirks, H.K.
Author_Institution :
Bell Telephone Laboratories, Murray Hill, NJ
Abstract :
This paper describes a compact model for bipolar transistors which includes a unified representation of quasi-saturation effects. The formulation of this model has been verified with results from physical simulations of a high voltage bipolar transistor. Excellent agreement between detailed physical simulations and the compact model is observed over a wide range of operating conditions for dc and ac small-signal characteristics.
Keywords :
Bipolar transistors; Circuit simulation; Conductivity; Epitaxial layers; Equations; Laboratories; Proximity effect; Semiconductor process modeling; Telephony; Voltage;
Conference_Titel :
Electron Devices Meeting, 1983 International
DOI :
10.1109/IEDM.1983.190444
