DocumentCode

3555994

Title

Contact technology in 3-5 device analysis and modification of metal-semiconductor contact interfaces in 3-5 devices

Author

Brillson, L.J.

Author_Institution

Xerox Webster Research Center, Webster, New York

Volume

29

fYear

1983

fDate

1983

Firstpage

111

Lastpage

114

Keywords

Artificial intelligence; Atomic layer deposition; Chemical compounds; Degradation; Gallium arsenide; Gold; Lattices;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1983 International

Type

conf

DOI

10.1109/IEDM.1983.190453

Filename

1483578