Title :
N-Well and p-well performance comparison
Author :
Wollesen, Donald L. ; Haskell, Jacob ; Yu, James
Author_Institution :
Advanced Micro Devices, Sunnyvale, CA
Abstract :
This paper compares N-Well and P-Well technology using nearly identical 6 transistor core cell 1K×4 Static RAMS. The performance of these SRAMs is compared for operating range, speed, latchup, and electrostatic discharge performance.
Keywords :
CMOS process; CMOS technology; Delay; Doping; Electrostatic discharge; Implants; Jacobian matrices; Random access memory; Silicon; Transistors;
Conference_Titel :
Electron Devices Meeting, 1983 International
DOI :
10.1109/IEDM.1983.190465
