DocumentCode
3556006
Title
N-Well and p-well performance comparison
Author
Wollesen, Donald L. ; Haskell, Jacob ; Yu, James
Author_Institution
Advanced Micro Devices, Sunnyvale, CA
Volume
29
fYear
1983
fDate
1983
Firstpage
155
Lastpage
158
Abstract
This paper compares N-Well and P-Well technology using nearly identical 6 transistor core cell 1K×4 Static RAMS. The performance of these SRAMs is compared for operating range, speed, latchup, and electrostatic discharge performance.
Keywords
CMOS process; CMOS technology; Delay; Doping; Electrostatic discharge; Implants; Jacobian matrices; Random access memory; Silicon; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1983 International
Type
conf
DOI
10.1109/IEDM.1983.190465
Filename
1483590
Link To Document