DocumentCode :
3556011
Title :
Hot-electron effects in MOSFETs
Author :
Hu, Chenming
Author_Institution :
University of California, Berkeley, CA
Volume :
29
fYear :
1983
fDate :
1983
Firstpage :
176
Lastpage :
181
Abstract :
The physics of several hot-electron currents and their impact on IC performance and reliability is reviewed, 
is emphasized as the driving force of all hot-electron effects. 
, and 
affect the hot-electron effects only through their influence on Vdsat . A simple hot-electron sealing rule is to scale 
, and 
in proportion to . Several proposed structural changes should provide considerable relief to the hot-electron problem.
is emphasized as the driving force of all hot-electron effects. , and affect the hot-electron effects only through their influence on V , and in proportion to . Several proposed structural changes should provide considerable relief to the hot-electron problem.Keywords :
Charge carrier processes; Circuits; Degradation; EPROM; Electron traps; Impact ionization; MOSFETs; Power supplies; Read-write memory; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1983 International
Type :
conf
DOI :
10.1109/IEDM.1983.190470
Filename :
1483595
Link To Document :
