Title :
Characterization of simultaneous bulk and interface high-field trapping effects in SiO2
Author :
Nissan-Cohen, Y. ; Shappir, J. ; Frohman-Bentchkowsky, D.
Author_Institution :
The Hebrew University of Jerusalem, Jerusalem, ISRAEL
Abstract :
A combined C-V, I-V measurement method is used to detect and characterize the simultaneous effects of several types of high field trapping phenomena in polysilicon-oxide-silicon capacitors. The experimental results show that both positive and negative charges are produced in the oxide but with different spatial distributions and time constants and that interface states are generated.
Keywords :
Capacitance-voltage characteristics; Charge measurement; Current measurement; Electric breakdown; Electron traps; Interface states; MOS capacitors; Shape measurement; Threshold voltage; Tunneling;
Conference_Titel :
Electron Devices Meeting, 1983 International
DOI :
10.1109/IEDM.1983.190471
