DocumentCode
3556024
Title
An IGFET inversion charge model for VLSI systems
Author
Lewyn, L.L. ; Meindl, J.D.
Author_Institution
Stanford University, Stanford, California
Volume
29
fYear
1983
fDate
1983
Firstpage
233
Lastpage
236
Abstract
VLSI IGFET systems will operate in a range of power supply voltage where use of the classical linear analytical models [1] will result in an overestimation of inversion charge. Accurate estimates are essential to the computation of signal charge in dynamic memories and logic and noise charge in switched capacitor precision data acquisition subsystems. The purpose of this paper is to present a new analytical model for inversion and depletion charge which is valid in all regions of operation.
Keywords
Analytical models; Capacitance-voltage characteristics; Circuit simulation; Electrostatics; Integral equations; Logic; Power supplies; Power system modeling; Very large scale integration; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1983 International
Type
conf
DOI
10.1109/IEDM.1983.190484
Filename
1483609
Link To Document