Title :
An IGFET inversion charge model for VLSI systems
Author :
Lewyn, L.L. ; Meindl, J.D.
Author_Institution :
Stanford University, Stanford, California
Abstract :
VLSI IGFET systems will operate in a range of power supply voltage where use of the classical linear analytical models [1] will result in an overestimation of inversion charge. Accurate estimates are essential to the computation of signal charge in dynamic memories and logic and noise charge in switched capacitor precision data acquisition subsystems. The purpose of this paper is to present a new analytical model for inversion and depletion charge which is valid in all regions of operation.
Keywords :
Analytical models; Capacitance-voltage characteristics; Circuit simulation; Electrostatics; Integral equations; Logic; Power supplies; Power system modeling; Very large scale integration; Voltage;
Conference_Titel :
Electron Devices Meeting, 1983 International
DOI :
10.1109/IEDM.1983.190484
