• DocumentCode
    3556038
  • Title

    Very low-threshold OMVPE-crown quantum-well lasers

  • Author

    Hersee, S.D. ; Razeghi, M. ; Blondeau, R. ; Krakowski, M. ; de Cremoux, B. ; Duchemin, J.P.

  • Author_Institution
    L.C.R., Thomson-CSF, Orsay, France
  • Volume
    29
  • fYear
    1983
  • fDate
    1983
  • Firstpage
    288
  • Lastpage
    291
  • Abstract
    This paper begins by reviewing the recent progress of single and multiple quantum well (SQW and MQW) lasers grown By OMVPE and MBE. Results are then presented of an extensive study of the GRIN-SCH and SCH GaAs/GaAlAs structures, where we have measured the major lasing characteristics, i.e, J_{TH} T_{O} \\lambda and Y_{ext} , for a wide range of quantum well thickness and layer composition.
  • Keywords
    DH-HEMTs; Electron optics; Epitaxial growth; Molecular beam epitaxial growth; Optical devices; Particle beam optics; Photonic integrated circuits; Quantum well devices; Quantum well lasers; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1983 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1983.190498
  • Filename
    1483623
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3556038