DocumentCode
3556040
Title
Temperature dependence of wavelength tuning with semiconductor integrated etalon interference lasers
Author
Antreasyan, Arsam ; Wang, Shyh
Author_Institution
University of California, Berkeley, California
Volume
29
fYear
1983
fDate
1983
Firstpage
296
Lastpage
299
Abstract
The temperature behaviour of the electronically wavelength-tunable, separately pumped integrated-etalon-interference laser operating at 0.9 µm is reported. This laser consists of a resonator with curved and straight segments. The lasing wavelength is tuned by separately pumping different segments of the laser. In experiments performed at different temperatures we observe periodical variation of the tuning bandwidth as a function of temperature. For fixed current levels we have the possibility of stable longitudinal mode operation with respect to temperature with a wavelength locking range
as large as 17°C within which the wavelength changes at a rate of 0.6 Å/°C. Moreover, by adjusting both injection currents the lasing wavelength can be stabilized to within 1-2 Å up to a temperature range of 15°C.
as large as 17°C within which the wavelength changes at a rate of 0.6 Å/°C. Moreover, by adjusting both injection currents the lasing wavelength can be stabilized to within 1-2 Å up to a temperature range of 15°C.Keywords
Interference; Laser excitation; Laser modes; Laser theory; Laser tuning; Optical pumping; Pump lasers; Semiconductor lasers; Temperature dependence; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1983 International
Type
conf
DOI
10.1109/IEDM.1983.190500
Filename
1483625
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