DocumentCode :
3556042
Title :
High temperature and long life operation of new InGaAsP/InP 1.3 µm buried crescent lasers
Author :
Hirano, R. ; Oomura, E. ; Higuchi, H. ; Sakakibara, Y. ; Namizaki, H. ; Susaki, W. ; Fujikawa, Kenji
Author_Institution :
Mitsubishi Electric Corporation, Itami, Hyogo, Japan
fYear :
1983
fDate :
5-7 Dec. 1983
Firstpage :
304
Lastpage :
307
Abstract :
The main purpose of this study is to realize a highly reliable InP/InGaAsP lasers even at elevated temperatures. We present and demonstrate a new BC structure (displaced BC, D-BC) with optimized device parameters such as the dimensions of the active region and the doping levels of the constituent layers. A stable long life operation for more than 4,000 hours in automatic power control (APC) mode operation at a temperature of 80° C is obtained in these new lasers. The life time of the lasers are estimated to be 
hours( ≃ 9 years).
hours( ≃ 9 years).Keywords :
Fiber lasers; Indium phosphide; Laser beam cutting; Laser modes; Leakage current; Life estimation; Optical device fabrication; Optical fiber communication; Temperature; Threshold current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1983 International
Conference_Location :
Washington, DC, USA
Type :
conf
DOI :
10.1109/IEDM.1983.190502
Filename :
1483627
Link To Document :
