• DocumentCode
    3556042
  • Title

    High temperature and long life operation of new InGaAsP/InP 1.3 µm buried crescent lasers

  • Author

    Hirano, R. ; Oomura, E. ; Higuchi, H. ; Sakakibara, Y. ; Namizaki, H. ; Susaki, W. ; Fujikawa, Kenji

  • Author_Institution
    Mitsubishi Electric Corporation, Itami, Hyogo, Japan
  • fYear
    1983
  • fDate
    5-7 Dec. 1983
  • Firstpage
    304
  • Lastpage
    307
  • Abstract
    The main purpose of this study is to realize a highly reliable InP/InGaAsP lasers even at elevated temperatures. We present and demonstrate a new BC structure (displaced BC, D-BC) with optimized device parameters such as the dimensions of the active region and the doping levels of the constituent layers. A stable long life operation for more than 4,000 hours in automatic power control (APC) mode operation at a temperature of 80° C is obtained in these new lasers. The life time of the lasers are estimated to be 8 \\times 10^{4} hours( ≃ 9 years).
  • Keywords
    Fiber lasers; Indium phosphide; Laser beam cutting; Laser modes; Leakage current; Life estimation; Optical device fabrication; Optical fiber communication; Temperature; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1983 International
  • Conference_Location
    Washington, DC, USA
  • Type

    conf

  • DOI
    10.1109/IEDM.1983.190502
  • Filename
    1483627
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3556042