• DocumentCode
    3556058
  • Title

    Characteristics of MOS FET prepared on Si/MgO.Al2O3/SiO2/Si structure

  • Author

    Hokari, Yasuaki ; Mikami, Masao ; Egami, Koji ; Tsuya, Hideki ; Kanamori, Mitsuru ; Kanamori, Masaru

  • Author_Institution
    NEC Corporation, Kanagawa, Japan
  • Volume
    29
  • fYear
    1983
  • fDate
    1983
  • Firstpage
    368
  • Lastpage
    371
  • Abstract
    A new SOI (silicon on insulator) wafer with epitaxial-Si/epitaxial-MgO.Al2O3(0.1 µm)/SiO2(0.5 µm)/Si7 (
  • Keywords
    Dielectric substrates; Electron mobility; FETs; Leakage current; Optical films; P-n junctions; Parasitic capacitance; Semiconductor films; Silicon compounds; Silicon on insulator technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1983 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1983.190518
  • Filename
    1483643
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3556058