Title :
A high performance high voltage lateral PNP structure
Author :
Beasom, James D.
Author_Institution :
Harris Semiconductor, Melbourne, Florida
Abstract :
An improved high voltage lateral PNP structure is described. Devices built with the structure have HFEand Early voltage as good as quality discrete devices and maintain fTgreater than 1.5 MHz at 350V. The process is simpler than those previously described for production of complementary vertical devices. Experimental results for a range of profiles and geometries are presented.
Keywords :
Application specific integrated circuits; Bandwidth; Doping profiles; Geometry; Impurities; Low voltage; Niobium; Nonhomogeneous media; Poisson equations; Production;
Conference_Titel :
Electron Devices Meeting, 1983 International
DOI :
10.1109/IEDM.1983.190532
