DocumentCode
3556073
Title
Experimental study of a high blocking voltage power MOSFET with integrated input amplifier
Author
Leipold, L. ; Tihanyi, J.
Author_Institution
Siemens AG, Munich, West Germany
Volume
29
fYear
1983
fDate
1983
Firstpage
428
Lastpage
431
Abstract
Using a slight modification of the SIPMOS® (Siemens Power MOS) technology an integrated test structure has been realized containing a vertical power MOS transistor and an input amplifier. The input amplifier, hich greatly reduces the input capacitance, consists of a vertical n-channel transistor and a lateral p-channel transistor. By this way short switching times are possible even with high-ohmic drivers.
Keywords
Capacitance; Equivalent circuits; High power amplifiers; MOSFET circuits; Power MOSFET; Power amplifiers; Substrates; TV; Testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1983 International
Type
conf
DOI
10.1109/IEDM.1983.190533
Filename
1483658
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