• DocumentCode
    3556084
  • Title

    Long wavelength, wide spectral response (0.8-1.8 µm) Al0.48In0.52As/Ga0.47In0.53As avalanche photodiodes and Al0.48In0.52As electroabsorption PIN avalanche detectors grown by molecular

  • Author

    Capasso, Federico ; Alavi, K. ; Cho, A.Y. ; Foy, P.W. ; Bethea, C.G.

  • Author_Institution
    Bell Laboratories, Murray Hill, New Jersey
  • fYear
    1983
  • fDate
    5-7 Dec. 1983
  • Firstpage
    468
  • Lastpage
    471
  • Abstract
    We report the first Al0.48In0.52As/Ga0.47- In0.53As SAM avalanche photodiode, The device, grown by MBE, has high responsitivity over a wide spectral range (0.85-1.7µm). Avalanche gains of ≅ 27 at low voltages ( l\\sim 30 V) are observed. Fast response with a FWHM of = 250ps and no tails are observed. In addition a new APD structure (HI-LO SAM APD) exhibiting superior performance with respect to a conventional SAM APD has been demonstrated. This novel design improves the conventional SAM APD by the addition of an electric field profile resembling that of an Impatt diode. A gain of 50 and a low dark current (InA) have been demonstrated in the same material system. Finally the operation of electroabsorption pin APD\´s is also reported.
  • Keywords
    Avalanche photodiodes; Dark current; Delay; Detectors; Electrons; Heterojunctions; Indium phosphide; Low voltage; Molecular beam epitaxial growth; Tail;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1983 International
  • Conference_Location
    Washington, DC, USA
  • Type

    conf

  • DOI
    10.1109/IEDM.1983.190544
  • Filename
    1483669
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3556084