• DocumentCode
    3556085
  • Title

    MBE AlxGa1-xAs/GaAs phototransistors sensitive at low illumination

  • Author

    Nottenburg, R. ; Bühlmann, H.J. ; Bischoff, J.C. ; Ilegems, M.

  • Author_Institution
    Swiss Federal Institute of Technology, Lausanne, Switzerland
  • Volume
    29
  • fYear
    1983
  • fDate
    1983
  • Firstpage
    472
  • Lastpage
    474
  • Abstract
    Floating base Al0.4Ga0.6As heterojunction bipolar transistors have been grown with MBE with optical gains near unity at illumination levels down to < 10 pW for a 5 × 10-4cm2device area. Dark currents are below 1 pA for the best devices. A maximum gain of 8 to 10 is observed at ∼ 1 W/cm2incident power level.
  • Keywords
    Dark current; Gallium arsenide; Heterojunctions; High speed optical techniques; Lighting; Optical buffering; Optical devices; Optical filters; Phototransistors; Scanning electron microscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1983 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1983.190545
  • Filename
    1483670
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3556085