Title :
MBE AlxGa1-xAs/GaAs phototransistors sensitive at low illumination
Author :
Nottenburg, R. ; Bühlmann, H.J. ; Bischoff, J.C. ; Ilegems, M.
Author_Institution :
Swiss Federal Institute of Technology, Lausanne, Switzerland
Abstract :
Floating base Al0.4Ga0.6As heterojunction bipolar transistors have been grown with MBE with optical gains near unity at illumination levels down to < 10 pW for a 5 × 10-4cm2device area. Dark currents are below 1 pA for the best devices. A maximum gain of 8 to 10 is observed at ∼ 1 W/cm2incident power level.
Keywords :
Dark current; Gallium arsenide; Heterojunctions; High speed optical techniques; Lighting; Optical buffering; Optical devices; Optical filters; Phototransistors; Scanning electron microscopy;
Conference_Titel :
Electron Devices Meeting, 1983 International
DOI :
10.1109/IEDM.1983.190545
