Monolithically integrated In0.53Ga0.47As-PIN/InP-MISFET photoreceiver

This paper describes a monolithically integrated In0.53Ga0.47As PIN-InP/MISFET photoreceiver on a semiinsulating substrate. After growing a heavily doped FET contact layer by LPE, a photodiode absorbing layer was grown by VPE, which has resulted in simultaneously achieving a low PIN capacitance and low gate-source resistance. An absorbing layer carrier concentration, as low as 3 × 10¹⁵cm^-3, has been obtained. Junction capacitance was 0.5 pF at-6V. The photodiode has an InP window layer. The responsivities were almost flat in the spectral range between 1.1 and 1.55 µm. The FET gate was about 3.5 µm long and 400 µm wide. Effective FET mobility was estimated at around 1000 cm^2.V^-1.S^-1. Receiver sensitivities were measured at 100 Mb/s.