Single 5V EPROM with sub-micron memory transistor and on-chip high voltage generator

A new EPROM technology has been developed that enables the device to be operated with a single 5V power supply. The key factors for the voltage reduction are: (1) The stacked gate MOS memory transistor has been scaled down to a submicron level (0.8µm channel length). (2) An on-chip high voltage generator has been provided to generate control gate voltage of 12V which requires almost no power consumption for sufficient programming. Both soft-write endurance and memory retention were estimated to be more than 10 years, showing that the single 5V EPROM technology is compatible with high density EPROM.