• DocumentCode
    3556112
  • Title

    A new mask ROM cell programmed by through-hole using double polysilicon technology

  • Author

    Masuoka, Fujio ; Ariizumi, Shoji ; Iwase, Taira ; Maeda, Kumiko ; Ono, Michihiro ; Endo, Norio

  • Author_Institution
    Toshiba Corp., Kawasaki, Japan
  • Volume
    29
  • fYear
    1983
  • fDate
    1983
  • Firstpage
    577
  • Lastpage
    580
  • Abstract
    A new through-hole programmed MASK ROM cell which is suitable for 1Mbit high speed MASK ROM with short turn around time in programming processes, and small cell size is descrived. The memory cell is implemented by NOR gate type which is most suitable for high speed MASK ROM. The new memory cell is successfully applied to 1Mbit MASK ROM with double polysilicon P-well C-MOS technology. A new structure and a new fabrication processes of the device element are also described.
  • Keywords
    Aluminum; Electrodes; Fabrication; Implants; Integrated circuit technology; Joining processes; Passivation; Process design; Read only memory; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1983 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1983.190572
  • Filename
    1483697
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3556112