DocumentCode
3556119
Title
1/f Noise in GaAs MESFETs
Author
Su, Chung-yi ; Rohdin, Hans ; Stolte, Charles
Author_Institution
Hewlett Packard Laboratories, Palo Alto, California
Volume
29
fYear
1983
fDate
1983
Firstpage
601
Lastpage
604
Abstract
The origin of low frequency noise in GaAs MESFETs was experimentally investigated. Traps in a depletion region of the MESFET were found to be primarily responsible for the low frequency noise. The observed dependence of the low frequency noise on the gate length supports this conclusion.
Keywords
Frequency; Gallium arsenide; JFETs; Low-frequency noise; MESFETs; Noise measurement; Phase noise; Semiconductor device noise; Semiconductor-metal interfaces; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1983 International
Type
conf
DOI
10.1109/IEDM.1983.190578
Filename
1483703
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