Title :
1/f Noise in GaAs MESFETs
Author :
Su, Chung-yi ; Rohdin, Hans ; Stolte, Charles
Author_Institution :
Hewlett Packard Laboratories, Palo Alto, California
Abstract :
The origin of low frequency noise in GaAs MESFETs was experimentally investigated. Traps in a depletion region of the MESFET were found to be primarily responsible for the low frequency noise. The observed dependence of the low frequency noise on the gate length supports this conclusion.
Keywords :
Frequency; Gallium arsenide; JFETs; Low-frequency noise; MESFETs; Noise measurement; Phase noise; Semiconductor device noise; Semiconductor-metal interfaces; Voltage;
Conference_Titel :
Electron Devices Meeting, 1983 International
DOI :
10.1109/IEDM.1983.190578
