Modeling rapid thermal annealing processes for shallow junction formation in silicon

Computer modeling of impurity diffusion during rapid thermal annealing (RTA) in a halogen lamp system has been performed. It is found that large, transient concentrations of point defects are generated during the annealing of implantation damage. The duration of the transients are comparable with the times used in RTA. The result is enhanced diffusion of the implanted species. The enhanced diffusion depends on the damage annealing which itself depends on implant dose and energy as well as on temperature. Successful modeling of B and As during RTA has been achieved over wide dose ranges but over limited energy ranges.