Title :
GaAsP-InGaAs superlattice light-emitting diodes
Author :
Timmons, M.L. ; Katsuyama, T. ; Sillmon, R. ; Bedair, S.M.
Author_Institution :
Research Triangle Institute, Research Triangle Park, NC
Abstract :
A strained-layer superlattice using layers of GaAs0.8P0.2-In0.9Ga0.1As is described which has an average latice constant matched to GaAs; this permits growth of devices directly on GaAs. A double-heterostructure light emitting diode, emitting near 1 µm with the superlattice structure, have been characterized and shows no degradation in 200 h of operation at 25°C and 20 A/cm2. A three-terminal, dual-wavelength LED has been fabricated with peak emissions at 0.886 and 0.874 µm. This device has very high series resistance.
Keywords :
Electron mobility; Gallium arsenide; Indium gallium arsenide; Laser sintering; Lattices; Light emitting diodes; Molecular beam epitaxial growth; Optoelectronic devices; Substrates; Superlattices;
Conference_Titel :
Electron Devices Meeting, 1983 International
DOI :
10.1109/IEDM.1983.190602
