• DocumentCode
    3556147
  • Title

    n-Channel MISFETs on long wavelength p-Hg1-xCdxTe

  • Author

    Schiebel, R.A.

  • Author_Institution
    Texas Instruments Incorporated, Dallas, Texas
  • Volume
    29
  • fYear
    1983
  • fDate
    1983
  • Firstpage
    711
  • Lastpage
    714
  • Abstract
    Depletion mode MISFETs have been fabricated and operated on long wavelength (λc= 11.0 µm) Hg1-xcdxTe for the first time. Current voltage characteristics of the devices are presented and discussed. The surface mobility of electrons has been calculated from these data to be \\sim 6 \\times 10^{4} cm2/Vs the highest ever observed on a Hg1-xCdxTe to MISFET. Small signal parameters are also derived from current voltage characteristics. The operation of a Hg1-xcdxTe MISFET as an amplifier with gain is demonstrated, and data on a fully integrated Hg1-xcdxTe source follower circuit is presented and discussed.
  • Keywords
    Current-voltage characteristics; Detectors; Diodes; Implants; Integrated circuit technology; MISFETs; Operational amplifiers; Sensor arrays; Voltage; Wavelength measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1983 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1983.190607
  • Filename
    1483732
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3556147