DocumentCode :
3556149
Title :
Diffusion limited dark current in n-type (Hg,Cd)Te MIS devices
Author :
Colombo, Luigi ; Syllaios, A.J.
Author_Institution :
Texas Instruments Incorporated, Dallas, Texas
Volume :
29
fYear :
1983
fDate :
1983
Firstpage :
718
Lastpage :
721
Abstract :
A dominant diffusion limited dark current behavior is observed in Metal Insulator Semiconductor (MIS) devices on uncompensated n-type (Hg,Cd)Te. The measured dark current in crystals with an 80K spectral cut-off wavelength ranging from 9,3µm to 9.9µm is found to approach the intrinsic Auger limit at temperatures above 65K. This behavior is observed only in crystals with dislocation densities lower than 
cm-2, whereas in crystals with higher dislocation densities diffusion currents predominate at higher temperatures.
cm-2, whereas in crystals with higher dislocation densities diffusion currents predominate at higher temperatures.Keywords :
Crystals; Current measurement; Dark current; Infrared detectors; MIS devices; Photonic band gap; Temperature dependence; Temperature distribution; Tunneling; Wavelength measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1983 International
Type :
conf
DOI :
10.1109/IEDM.1983.190609
Filename :
1483734
Link To Document :
