DocumentCode
3556150
Title
A PtSi Schottky-barrier infrared MOS area imager with large fill factor
Author
Denda, Masahiko ; Kimata, Masafumi ; Yutani, Naoki ; Tsubouchi, Natsuro ; Uematsu, Shigeyuki
Author_Institution
Mitsubishi Electric Corporation, Hyogo, Japan
Volume
29
fYear
1983
fDate
1983
Firstpage
722
Lastpage
725
Abstract
A 64 × 64-element silicon monolithic infrared MOS area imager (IR-MOS) with platinum silicide Schottky barrier (PtSi S.B.) detectors has been developed. Using MOS X-Y address circuitry, the fill facter of the device increased to 56 percent without degradation of the dynamic range. The dynamic range was 48 dB The responsivity was 
V/W at 1000 K and the sensitivity was 10.5 mV/K at 300 K. The performance of the IR-MOS was sufficient to obtain a thermal image in the range of the 3 to 5 µm atmospheric window without any electrical compensation of the imaged signal.
V/W at 1000 K and the sensitivity was 10.5 mV/K at 300 K. The performance of the IR-MOS was sufficient to obtain a thermal image in the range of the 3 to 5 µm atmospheric window without any electrical compensation of the imaged signal.Keywords
Circuits; Dynamic range; Infrared detectors; Infrared imaging; Large scale integration; Platinum; Schottky barriers; Silicides; Silicon; Thermal degradation;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1983 International
Type
conf
DOI
10.1109/IEDM.1983.190610
Filename
1483735
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