Title :
GaAlAs buried multi-quantum-well laser fabricated by diffusion induced disordering
Author :
Fukuzawa, T. ; Semura, S. ; Ohta, T. ; Uchida, Y. ; Kobayashi, K.L.I. ; Nakashima, H.
Author_Institution :
Optoelectronics Joint Research Laboratory, Kawasaki, Japan
Keywords :
Laser modes; Optical control; Optical device fabrication; Optical waveguides; Quantum well devices; Refractive index; Semiconductor lasers; Substrates; Threshold current; Zinc;
Conference_Titel :
Electron Devices Meeting, 1983 International
DOI :
10.1109/IEDM.1983.190618
