مرکز منطقه ای اطلاع رساني علوم و فناوري - SiGMOS

DocumentCode :

3556160

Title :

SiGMOS - A silicon gigabit/s NMOS technology

Author :

Ko, P.K. ; Voshchenkov, A.M. ; Hanson, R.C. ; Grabbe, P. ; Tennant, D.M. ; Archer, V.D. ; Chin, G.M. ; Lau, M. ; Soo, D.C. ; Wooley, B.A.

Author_Institution :

Bell Laboratories, Holmdel, New Jersey

fYear :

1983

fDate :

5-7 Dec. 1983

Firstpage :

751

Lastpage :

753

Keywords :

Artificial intelligence; Circuits; Etching; Fabrication; Implants; MOS devices; Oxidation; Parasitic capacitance; Resists; Silicon;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Electron Devices Meeting, 1983 International

Conference_Location :

Washington, DC, USA

Type :

conf

DOI :

10.1109/IEDM.1983.190620

Filename :

1483745

Link To Document :