Title :
Submicron self-aligned recessed gate InGaAs MISFET exhibiting very high transconductance
Author :
Cheng, C.L. ; Liao, A.S.H. ; Chang, T.Y. ; Leheny, R.F. ; Coldren, R.F. ; Lalevic, B.
Author_Institution :
Bell Laboratories, Holmdel, New Jersey
Keywords :
Chromium; FETs; Gold; Indium gallium arsenide; Indium phosphide; MISFETs; Metallization; Sputter etching; Substrates; Transconductance;
Conference_Titel :
Electron Devices Meeting, 1983 International
DOI :
10.1109/IEDM.1983.190621
