DocumentCode :
3556162
Title :
VLSI Device fabrication using a unique, highly-selective Si3N4dry etching
Author :
Kure, T. ; Kawamoto, Y. ; Hashimoto, N. ; Takaichi, T.
Author_Institution :
Hitachi Ltd., Tokyo, Japan
Volume :
29
fYear :
1983
fDate :
1983
Firstpage :
757
Lastpage :
759
Keywords :
Anisotropic magnetoresistance; Chemical processes; Dry etching; Electron devices; Fabrication; Gases; Laboratories; Plasma applications; Polymers; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1983 International
Type :
conf
DOI :
10.1109/IEDM.1983.190622
Filename :
1483747
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3556162
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