• DocumentCode
    3556191
  • Title

    A manufacturable 1.2 um double poly, double level metal CMOS process for a one-megabit DRAM

  • Author

    Harrington, Thomas ; Bayless, Malcolm ; Waller, Bill ; Chan, Tak-Ming Cyrus ; Chan, T.C.

  • Author_Institution
    Mostek Corporation, Carrollton, Texas
  • Volume
    30
  • fYear
    1984
  • fDate
    1984
  • Firstpage
    71
  • Lastpage
    74
  • Abstract
    In recent years, many highly sophisticated technologies have been advanced for producing VLSI circuits. These include such schemes as deep trench isolation and trench capacitors
  • Keywords
    Boron; CMOS process; CMOS technology; Circuits; Conductors; Dielectrics; Isolation technology; Manufacturing processes; Random access memory; Resists;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1984 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1984.190644
  • Filename
    1484415
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3556191