DocumentCode
3556195
Title
A study of avalanche breakdown in scaled n-MOSFETs
Author
Laux, S.E. ; Gaensslen, F.
Author_Institution
IBM T. J. Watson Research Center, Yorktown Heights, NY
Volume
30
fYear
1984
fDate
1984
Firstpage
84
Lastpage
87
Abstract
The behavior of channel breakdown in n-MOSFETs miniaturized by isothermal, constant field scaling is examined. Both a first-order analytical estimate and rigorous two-dimensional numerical simulation are used to understand the scaling of channel breakdown. A sublinear dependence of sustaining and snapback voltages on channel length is found and explained.
Keywords
Algorithm design and analysis; Avalanche breakdown; Doping; Electric breakdown; Equations; Implants; Isothermal processes; MOSFET circuits; Numerical simulation; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1984 International
Type
conf
DOI
10.1109/IEDM.1984.190648
Filename
1484419
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