DocumentCode
3556214
Title
Studies of trapping and conduction in ultrathin SiO2 gate insulators
Author
Moslehi, Mehrdad M. ; Saraswat, Krishna C.
Author_Institution
Intersil Corp., Cupertino
Volume
30
fYear
1984
fDate
1984
Firstpage
157
Lastpage
160
Abstract
The conduction and trapping phenomena in very thin (100 Å) thermally grown films of SiO2 have been studied and their dependences on temperature have been determined from room temperature to 200 °C. The results of constant current injection trapping studies indicated that the total breakdown charge density decreases approximately linearly with the logarithm of injection current density, 
. The total breakdown charge density showed an Arrhenius behavior with temperature and a single activation energy of 0.155 eV was obtained for 
A/cm2. The mean breakdown voltage obtained from time dependent electrical breakdown experiments was independent of temperature for a constant . However, at room temperature the mean breakdown voltage showed a tendency to increase with increasing .
. The total breakdown charge density showed an Arrhenius behavior with temperature and a single activation energy of 0.155 eV was obtained for A/cm2. The mean breakdown voltage obtained from time dependent electrical breakdown experiments was independent of temperature for a constant . However, at room temperature the mean breakdown voltage showed a tendency to increase with increasing .Keywords
Breakdown voltage; Conductive films; Current density; Electric breakdown; Linear approximation; Temperature dependence; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1984 International
Type
conf
DOI
10.1109/IEDM.1984.190667
Filename
1484438
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