DocumentCode :
3556214
Title :
Studies of trapping and conduction in ultrathin SiO2 gate insulators
Author :
Moslehi, Mehrdad M. ; Saraswat, Krishna C.
Author_Institution :
Intersil Corp., Cupertino
Volume :
30
fYear :
1984
fDate :
1984
Firstpage :
157
Lastpage :
160
Abstract :
The conduction and trapping phenomena in very thin (100 Å) thermally grown films of SiO2 have been studied and their dependences on temperature have been determined from room temperature to 200 °C. The results of constant current injection trapping studies indicated that the total breakdown charge density decreases approximately linearly with the logarithm of injection current density, 
. The total breakdown charge density showed an Arrhenius behavior with temperature and a single activation energy of 0.155 eV was obtained for 
A/cm2. The mean breakdown voltage obtained from time dependent electrical breakdown experiments was independent of temperature for a constant . However, at room temperature the mean breakdown voltage showed a tendency to increase with increasing .
. The total breakdown charge density showed an Arrhenius behavior with temperature and a single activation energy of 0.155 eV was obtained for A/cm2. The mean breakdown voltage obtained from time dependent electrical breakdown experiments was independent of temperature for a constant . However, at room temperature the mean breakdown voltage showed a tendency to increase with increasing .Keywords :
Breakdown voltage; Conductive films; Current density; Electric breakdown; Linear approximation; Temperature dependence; Thermal conductivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1984 International
Type :
conf
DOI :
10.1109/IEDM.1984.190667
Filename :
1484438
Link To Document :
