InP high power MISFET

To investigate the capabilities of high frequency high power InP MISFET, the multi-finger type InP MISFETs are fabricated and their characteristics are discussed compared with those of GaAs MESFETs. Double gate-finger type InP MISFETs, whose gates are 360 µm wide, have the excellent RF output characteristics of 310 mW (0.86 W/mm) at 8 GHz with 33% power added efficiency. The 24 gate-finger type MISFETs, whose gates are 4800 µm wide, are fabricated using flip-chip bonding technique. 1.5 W output power from a chip, which is the highest value ever reported with InP MISFET, are obtained at 10 GHz with 4 dB gain.