DocumentCode
3556230
Title
Integrated resonant-microbridge vapor sensor
Author
Howe, R.T. ; Muller, R.S.
Author_Institution
Carnegie-Mellon University, Pittsburgh, PA
Volume
30
fYear
1984
fDate
1984
Firstpage
213
Lastpage
216
Abstract
A novel integrated vapor sensor is described that incorporates a polycrystalline silicon microbridge coated with a thin polymer film. The microbridge is resonated electrostatically and an integrated NMOS circuit detects its vibration. Vapor uptake by the polymer increases the mass-loading on the microbridge, thereby perturbing its first resonant frequency f1 . For the prototype sensor, negative photoresist is used as the sensor polymer, and the phase between the excitation and output voltages at resonance is monitored as the output signal. Exposure to saturated xylene vapor produces a phase shift of -8° with a response time of less than seven minutes.
Keywords
Circuits; MOS devices; Polymer films; Prototypes; Resists; Resonance; Resonant frequency; Sensor phenomena and characterization; Silicon; Thin film sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1984 International
Type
conf
DOI
10.1109/IEDM.1984.190683
Filename
1484454
Link To Document