• DocumentCode
    3556235
  • Title

    Polysilicon transistors in VLSI MOS memories

  • Author

    Shichijo, H. ; Malhi, S.D.S. ; Richardson, W.F. ; Pollack, G.P. ; Shah, A.H. ; Hite, L.R. ; Banerjee, S.K. ; Elahy, M. ; Sundaresan, R. ; Womack, R.H. ; Lam, H.W. ; Chatterjee, P.K.

  • Author_Institution
    Texas Instruments Inc., Dallas, Texas
  • Volume
    30
  • fYear
    1984
  • fDate
    1984
  • Firstpage
    228
  • Lastpage
    231
  • Abstract
    The recent progress on the use of as-deposited, small grain LPCVD polysilicon transistors in VLSI memories is discussed with the emphasis on their applications for static and dynamic RAMs. Some process and device related issues are discussed. Successful implementation of an experimental stacked CMOS 64K sRAM proves the utility of these devices for three dimensional integration in a VLSI environment.
  • Keywords
    CMOS technology; Grain boundaries; Hydrogen; Leakage current; MOSFETs; Passivation; Plasma temperature; Threshold voltage; Transistors; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1984 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1984.190688
  • Filename
    1484459
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3556235