Scaling consideration and dielectric breakdown improvement of corrugated capacitor cell (CCC) for future DRAM

Further scaling of Corrugated Capacitor Cell (CCC) is discussed in terms of cell configuration and device parameters. As the results of experimental analyses and device simulation key parameters of the cell scaling are suggested. In addition to the cell scalability some improvements in dielectric breakdown of capacitor insulator are described. This insulator integrity is one of the key issues for the reliability of dRAM´s having trench capacitor.