Recent advances in discrete power transistors

Recent improvements in power bipolar transistors (BJTs) and power MOSFETs are described. The items discussed include design and process modifications that have led to improved device performance. In the final portion, the important characteristics a relatively new power transistor, called the COMFET, are presented. These items include: the fabrication of both n- and p-channel COMFETs; the low on-resistance of high-voltage COMFETs compared to high-voltage MOSFETs and BJTs; fall times down to 0.1 µs; and the temperature dependencies of these parameters.