DocumentCode :
3556253
Title :
Recent developments in CMOS latchup
Author :
Troutman, Ronald R.
Author_Institution :
IBM General Technology Division, Essex Jct., Vt.
Volume :
30
fYear :
1984
fDate :
1984
Firstpage :
296
Lastpage :
299
Abstract :
CMOS is rapidly becoming an important VLSI technology, and if its scaling is to continue, latchup must be understood and controlled. Coupled with dramatic CMOS technology improvements in recent years have come significant advances in latchup characterization and modeling. This talk highlights some of those advances.
Keywords :
Anodes; CMOS technology; Critical current; Current measurement; Doping; FETs; Semiconductor device measurement; Testing; Threshold voltage; Voltage measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1984 International
Type :
conf
DOI :
10.1109/IEDM.1984.190706
Filename :
1484477
Link To Document :
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