Title :
Development of an improved 16 × 64 InSb CID array
Author :
Wei, C.Y. ; Woodbury, H.H. ; Wang, S.C.-H.
Author_Institution :
General Electric Corporate Research and Development, Schenectady, NY
Abstract :
In this paper, we describe a 16 × 64 InSb CID array using a concentric gate structure and planar process designed for scanning TDI applications. Excellent dual-gate coupling and charge transfer demonstrate, for the first time, the feasibility of the ideal mode operation. Preliminary array performance data were obtained using the sequential row inject readout scheme in its simplest form.
Keywords :
Capacitance; Charge transfer; Design optimization; Potential well; Sampling methods; Voltage;
Conference_Titel :
Electron Devices Meeting, 1984 International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1984.190728
