Fully-integrated ZnO on silicon pyroelectric infrared detector array

A fully-integrated, 64-element, pyroelectric infrared-detector array, fabricated on a thin-membrane structure by combining ZnO thin-film deposition technology, NMOS planar processing, and anisotropic backside etching of silicon is described. Incident thermal radiation on individual detector elements is sensed by the temperature change in a structure composed of a ZnO pyroelectric capacitor encapsulated in silicon dioxide and supported by a 25 µm-thick silicon membrane. Thai measured black-body responsivity at temperature T=300 K and frequency f=24 Hz is 4.3 × 10⁴VW^-1with a corresponding measured detectivity D^*=3.1 × 10⁷cm √ HzW^-1.