A high performance CMOS process for the next generation EPROM

A high performance CMOS process has been developed for the fabrication of the next generation EPROM family. The effective channel length of the EPROM transistor is approximately 1.0 µm, with the gate and inter-poly oxide thicknesses, and junction depths scaled accordingly. Using this transistor, the cell size can be scaled to less than 20 µm². By utilizing state-of-the-art lithography, dry etch, and glass reflow technologies, a one megabit EPROM can be fabricated. With proper shrinking of the dimensions, the cell can be reduced to approximately 12µm,², demonstrating that this process is sufficient for future EPROM´s in the multi-million-bit range.